Type

Conference Proceedings

Authors

John Francis Donegan

Subjects

Physics

Topics
simulation model semiconductor lasers numerical model self pulsation device narrow stripe algainas 1 3 m

Device design of 1.3?m AlGaInAs-InP narrow strip structure for self-pulsation operation (2005)

Abstract A complete design of 1.3 ?m AlGaInAs/InP narrow stripe semiconductor lasers for self-pulsating operation is realised by using a 2?1D simulation model. This numerical model is based on the effective index method and self-sustained pulsation mechanism in the narrow stripe lasers. The self-pulsation effect is enhanced by the self focusing and defocusing of the optical field which is dependent on the modification of carrier densities in the active region. The resulting AlGaInAs-InP device with compressively strained multi-QWs showed self-pulsation frequency of 3.5 GHz.
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Full list of authors on original publication

John Francis Donegan

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John Francis Donegan
Trinity College Dublin
Total Publications: 152