Conference Proceedings


John Francis Donegan



semiconductor quantum wells temperature dependence effective mass small signal modulation bandwidth ingaasn materials carrier density linewidth enhancement factor

Linewidth enhancement factor and modulation bandwidth of lattice matched 1.5 micron InGaAsN/GaAs quantum well lasers (2004)

Abstract The linewidth enhancement factors of lattice-matched 1.5 ?m wavelength InGaNAs/GaAs and InGaAs/InP singlequantum- well structures have been calculated using microscopic theory including many-body effects and a 10x10 effective-mass Hamiltonian. For applications which require high gain and carrier densities, InGaNAs/GaAs quantum wells have a much lower linewidth enhancement factor over a temperature range 300?400 K than InGaAs. The linewidth enhancement factor of InGaNAs is almost independent of both carrier density and temperature compared with InGaAs. The small-signal modulation characteristics of these 1.5?m lattice-matched structures and their temperature dependence have also been calculated. It is found that the maximum bandwidth of the InGaNAs/GaAs quantum well lasers is about 2.3 times larger than that of the InGaAs/InP quantum well lasers due to the high differential gain. The slope efficiency for the 3dB bandwidth as a function of optical density is twice as large for InGaNAs/GaAs as for InGaAs/InP quantum well lasers.
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John Francis Donegan

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John Francis Donegan
Trinity College Dublin
Total Publications: 156