Type

Journal Article

Authors

John Hegarty
Eithne Mary Mc Cabe
John Francis Donegan

Subjects

Physics

Topics
zinc compounds ii vi semiconductors carrier density two dimensional optical diffusion measurement cadmium compounds semiconductor quantum wells

Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well (1997)

Abstract We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ~ 500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se?ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ~ 1 ? 1018 cm ? 3 and we deduce an ambipolar diffusion constant of 1.7 cm2 s ? 1.
Collections Ireland -> Trinity College Dublin -> RSS Feeds
Ireland -> Trinity College Dublin -> School of Physics
Ireland -> Trinity College Dublin -> Physics
Ireland -> Trinity College Dublin -> Physics (Scholarly Publications)
Ireland -> Trinity College Dublin -> RSS Feeds

Full list of authors on original publication

John Hegarty, Eithne Mary Mc Cabe, John Francis Donegan

Experts in our system

1
John Francis Donegan
Trinity College Dublin
Total Publications: 152