Type

Journal Article

Authors

Jonathan Nesbit Coleman

Subjects

Physics

Topics
stress high pressure graphene band structure physics electronic structure raman spectroscopy behavior

High-pressure Raman spectroscopy of graphene (2009)

Abstract In situ high-pressure Raman spectroscopy is used to study monolayer, bilayer, and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behavior as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic band structure.
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Full list of authors on original publication

Jonathan Nesbit Coleman

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Jonathan Coleman
Trinity College Dublin
Total Publications: 217