Abstract Electroless deposited (ELD) cobalt with palladium as a catalyst, and an underlying self-assembled monolayer (SAM) was investigated for potential use in advanced complementary metal oxide semiconductor (CMOS) applications using both hard (HAXPES) and soft (XPS) x-ray photoelectron spectroscopy. HAXPES spectra established the uniformity of the deposited Co film and the nature of the buried Co-Si interface ~20nm below the surface. The Pd is seen to diffuse through the Co following thermal annealing. While the deposited Co film is predominantly metallic, Co-silicide forms at the Co-Si interface upon deposition and decomposes with thermal anneal up to 500°C.

Url http://doras.dcu.ie/23280/1/Characterisation%20of%20Electroless%20Hughes.pdf

Collections Ireland -> Dublin City University -> Publication Type = Conference or Workshop Item
Ireland -> Dublin City University -> Status = Published
Ireland -> Dublin City University -> Subject = Physical Sciences: Physics
Ireland -> Dublin City University -> Subject = Physical Sciences
Ireland -> Dublin City University -> DCU Faculties and Centres = DCU Faculties and Schools: Faculty of Science and Health: School of Physical Sciences