Type

Journal Article

Authors

Duesberg Georg S.
Niall McEvoy
Toby Hallam
Cullen Conor P.
Alison Hennessy
John Brendan Mc Manus

Subjects

Engineering

Topics
chemical vapor deposition nitrogen nitrogen doping doping plasma treatment chemical vapor depositions cvd graphene graphene transistor nanoscience materials

Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments (2017)

Abstract This report details the controllable doping of graphene through post‐growth plasma treatments. Defects are controllably introduced into the lattice using argon plasma, following this sample are exposed to ammonia/hydrogen plasma. During this nitrogen atoms get incorporated causing partial restoration of the graphene lattice. The damage levels are characterised by Raman and X‐ray photoelectron spectroscopies. The incorporation of nitrogen into the graphene lattice provides significant n‐doping. This is confirmed by the fabrication of graphene field‐effect transistors which show clear n‐type behaviour and mobilities not significantly less than those of pristine graphene. Thus this work demonstrates the viability of plasma treatments to reliably dope graphene.
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Full list of authors on original publication

Duesberg Georg S., Niall McEvoy, Toby Hallam, Cullen Conor P., Alison Hennessy, John Brendan Mc Manus

Experts in our system

1
Niall Mcevoy
Trinity College Dublin
Total Publications: 54
 
2
Toby Hallam
Trinity College Dublin
Total Publications: 20
 
3
John Brendan Mc Manus
Trinity College Dublin
Total Publications: 3