Type

Journal Article

Authors

WungYeon Kim
Georg S Duesberg
Gyu-Tae Kim
Andreas Hirsh
Frank Hauke
Mario Marcia
Chanyoung Yim
HyunJeong Kim
Maria O Brien
Niall Mc Evoy
and 1 others

Subjects

Chemistry

Topics
mos2 engineering single layer functionalisation electronic devices chemistry 2d materials field effect transistors fets

Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation (2018)

Abstract Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapourdeposition (CVD) on SiO2are reported. The dangling-bond-freesurface of MoS2was functionalised with a perylene bisimidederivative to allow for the deposition of Al2O3dielectric. Thisallowed the fabrication of top-gated, fully encapsulated MoS2FETs. Furthermore, by the definition of vertical contacts on MoS2,devices, in which the channel area was never exposed to polymers,were fabricated. The MoS2FETs showed some of the highest mobi-lities for transistors fabricated on SiO2with Al2O3as the top-gatedielectric reported so far. Thus, gate-stack engineering using inno-vative chemistry is a promising approach for the fabrication ofreliable electronic devices based on 2D materials.
Collections Ireland -> Trinity College Dublin -> Administrative Staff Authors (Scholarly Publications)
Ireland -> Trinity College Dublin -> Administrative Staff Authors

Full list of authors on original publication

WungYeon Kim, Georg S Duesberg, Gyu-Tae Kim, Andreas Hirsh, Frank Hauke, Mario Marcia, Chanyoung Yim, HyunJeong Kim, Maria O Brien, Niall Mc Evoy and 1 others

Experts in our system

1
Georg Duesberg
Trinity College Dublin
Total Publications: 116
 
2
Frank Hauke
Trinity College Dublin
Total Publications: 4
 
3
Chanyoung Yim
Trinity College Dublin
Total Publications: 14
 
4
Niall Mc Evoy
Trinity College Dublin
Total Publications: 20