Type

Conference Proceedings

Authors

Lars-Ake Ragnarsson
Thomas Kauerauf
Greg Hughes
Robert O'Connor

Subjects

Physics

Topics
high k dielectric hafnium oxide physics cmos reliability stress induced leakage current time dependent dielectric breakdown evolution voltage

Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS (2010)

Abstract In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å. The layers show maximum operating voltages in excess of 1V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current with time, temperature and stress voltage.
Collections Ireland -> Dublin City University -> Publication Type = Conference or Workshop Item
Ireland -> Dublin City University -> DCU Faculties and Centres = DCU Faculties and Schools
Ireland -> Dublin City University -> Status = Published
Ireland -> Dublin City University -> DCU Faculties and Centres = DCU Faculties and Schools: Faculty of Science and Health
Ireland -> Dublin City University -> Subject = Physical Sciences: Physics
Ireland -> Dublin City University -> Subject = Physical Sciences
Ireland -> Dublin City University -> DCU Faculties and Centres = DCU Faculties and Schools: Faculty of Science and Health: School of Physical Sciences

Full list of authors on original publication

Lars-Ake Ragnarsson, Thomas Kauerauf, Greg Hughes, Robert O'Connor

Experts in our system

1
Greg Hughes
Dublin City University
Total Publications: 29
 
2
Robert O'Connor
Dublin City University
Total Publications: 74