The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy. Using the combination of in situ deposition and analysis techniques, the interfacial "self-cleaning" is shown to be oxidation state dependent as well as metal organic precursor dependent. Thermodynamics, charge balance, and oxygen coordination drive the removal of certain species of surface oxides while allowing others to remain. These factors suggest proper selection of surface treatments and ALD precursors can result in selective interfacial bonding arrangements.
Ireland ->
Dublin City University ->
Publication Type = Article
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Dublin City University ->
DCU Faculties and Centres = DCU Faculties and Schools
Ireland ->
Dublin City University ->
Status = Published
Ireland ->
Dublin City University ->
DCU Faculties and Centres = DCU Faculties and Schools: Faculty of Science and Health
Ireland ->
Dublin City University ->
Subject = Physical Sciences: Physics
Ireland ->
Dublin City University ->
Subject = Physical Sciences
Ireland ->
Dublin City University ->
DCU Faculties and Centres = DCU Faculties and Schools: Faculty of Science and Health: School of Physical Sciences
Ireland ->
Dublin City University ->
Subject = Physical Sciences: Semiconductors
R. M. Wallace,
J. Kim,
H. C. Kim,
K. J. Choi,
F. S. Aguirre-Tostado,
B. Lee,
M. Milojevic,
Greg Hughes,
Stephen McDonnell,
E. M. Vogel
and 2 others
