We have used solution processing techniques to fabricate thin-film networks of nanosheets of six different transition metal dichalcogenides; MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2. We have measured both the dark conductivity and the photoconductivity under broad band illumination in the intensity range from 0-1500 W m(-2). The dark conductivity varied from ∼ 10(-6) S m(-1) for MoS2 to ∼ 1 S m(-1) for WTe2, with an apparent exponential dependence on bandgap. All materials studied show photocurrents which rise slowly with time and depend sub-linearly on light intensity, both hallmarks of trap limited processes. Because the photoresponse depends relatively weakly on bandgap, the ratio of photo- to dark conductivity is largest for the sulphides because of their lower dark conductivities. As such, MoS2 and WS2 may be best suited to photo-detection applications. However, due to their lower bandgap and superior conductivity, WSe2 and WTe2 might prove more effective in other applications, for example in photovoltaic cells.
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