Journal Article


Simon B. Newcomb
David Sutton
D. Noel Buckley
Colm O'Dwyer



semiconductor growth voltammetry chemical analysis electrolytes iii v semiconductors indium compounds anodisation nanoporous materials transmission electron microscopy nanotechnology porosity

Anodic formation and characterization of nanoporous InP in aqueous KOH electrolytes (2006)

Abstract The anodic behavior of highly doped (> 1018 cm-3) n-InP in aqueous KOH was investigated. Electrodes anodized in the absence of light in 2- 5 mol dm-3 KOH at a constant potential of 0.5- 0.75 V (SCE), or subjected to linear potential sweeps to potentials in this range, were shown to exhibit the formation of a nanoporous subsurface region. Both linear sweep voltammograms and current-time curves at constant potential showed a characteristic anodic peak, corresponding to formation of the nanoporous region. No porous region was formed during anodization in 1 mol dm-3 KOH. The nanoporous region was examined using transmission electron microscopy and found to have a thickness of some 1- 3 μm depending on the anodization conditions and to be located beneath a thin (typically ∼40 nm), dense, near-surface layer. The pores varied in width from 25 to 75 nm and both the pore width and porous region thickness were found to decrease with increasing KOH concentration. The porosity was approximately 35%. The porous layer structure is shown to form by the localized penetration of surface pits into the InP, and the dense, near-surface layer is consistent with the effect of electron depletion at the surface of the semiconductor.
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Full list of authors on original publication

Simon B. Newcomb, David Sutton, D. Noel Buckley, Colm O'Dwyer

Experts in our system

D. Noel Buckley
University College Cork
Total Publications: 27
Colm O'Dwyer
University College Cork
Total Publications: 121