Sub-20 nm diameter Ge nanowires with narrow size distributions were grown from Ag nanoparticle seeds in a supercritical fluid (SCF) growth process. The mean Ge nanowire diameter and size distribution was shown to be dependent upon Ag nanoparticle coalescence, using both spin-coating and a block copolymer (BCP) templating method for particle deposition. The introduction of a metal assisted etching (MAE) processing step in order to "sink" the Ag seeds into the growth substrate, prior to nanowire growth, was shown to dramatically decrease the mean nanowire diameter from 27.7 to 14.4 nm and to narrow the diameter distributions from 22.2 to 6.8 nm. Hence, our BCP-MAE approach is a viable route for controlling the diameters of semiconductor nanowires whilst also ensuring a narrow size distribution. The MAE step in the process was found to have no detrimental effect on the length or crystalline quality of the Ge nanowires synthesised.
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Materials Chemistry and Analysis Group
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Applied Nanoscience Group - Journal Articles
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University College Cork ->
College of Science, Engineering and Food Science
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Tyndall National Institute
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University College Cork ->
Applied Nanoscience Group
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University College Cork ->
Micro-Nanoelectronics Centre
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Chemistry
Ireland ->
University College Cork ->
Materials Chemistry and Analysis Group - Journal articles
Ireland ->
University College Cork ->
Chemistry - Journal Articles
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University College Cork ->
Research Institutes and Centres
Justin D. Holmes,
Michael A. Morris,
Nikolay Petkov,
Colm O'Dwyer,
Colm Glynn,
Tandra Ghoshal,
Subhajit Biswas,
Olan Lotty