Type

Journal Article

Authors

Cindy Colinge
Mark Goorsky
Michael A. Morris
Peter Fleming
Isabelle Ferain
Ki Yeol Byun

Subjects

Chemistry

Topics
germanium buried interfaces annealing activation x ray photoelectron spectroscopy substrate interface structure elemental semiconductors

Low temperature germanium to silicon direct wafer bonding using free radical exposure (2010)

Abstract A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 degrees C, advanced imaging techniques were used to characterize the bonded interface. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3360201)
Collections Ireland -> University College Cork -> College of Science, Engineering and Food Science
Ireland -> University College Cork -> Tyndall National Institute
Ireland -> University College Cork -> Environmental Research Institute - Journal Articles
Ireland -> University College Cork -> Tyndall National Institute - Journal Articles
Ireland -> University College Cork -> Environmental Research Institute
Ireland -> University College Cork -> Chemistry
Ireland -> University College Cork -> Chemistry - Journal Articles
Ireland -> University College Cork -> Research Institutes and Centres

Full list of authors on original publication

Cindy Colinge, Mark Goorsky, Michael A. Morris, Peter Fleming, Isabelle Ferain, Ki Yeol Byun

Experts in our system

1
Michael A. Morris
University College Cork
Total Publications: 164