Type

Other / n/a

Authors

Werner Blau
Robert Moore
Tania Perova

Subjects

Physics

Topics
tem quantitative analysis eels strained silicon raman spectroscopy silicon quantum wells high resolution transmission electron microscopy tem

Spectroscopical analyis of strained silicon quantum wells (2005)

Abstract In this study, Strained silicon Quantum Wells (QW) were characterised using a variety of micro-scopical techniques. Among the techniques used were Transmission Electron Microscopy (TEM), Elemental Electron Loss Spectroscopy (EELS), and micro-Raman spectroscopy. A combination of these methods facilitates investigation of the structure, the strain, and the dislocations present in such materials. Both conventional and High Resolution Transmission Electron Microscopy (HRTEM) are used to analyse strained silicon quantum wells (QW). These techniques allow for structure analysis at the atomic level. Elemental Electron Loss Spectroscopy (EELS) is used in tandem with other analytical techniques in order to give a quantitative analysis of the structures. The presence of various layers is independently verified using EELS, while layer depth and concentration profiles are also established. Relaxation levels in the virtual substrate as well as the strain in Si quantum wells are calculated using Raman spectroscopy.
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Full list of authors on original publication

Werner Blau, Robert Moore, Tania Perova

Experts in our system

1
Werner Blau
Trinity College Dublin
Total Publications: 109
 
2
Tania Perova
Trinity College Dublin
Total Publications: 87