Type

Journal Article

Authors

Hongzhou Zhang
Dapeng Yu
Ying Chen
Darragh Keane
Jakub Jadwiszczak
Yangbo Zhou

Subjects

Physics

Topics
two dimensional electron silicon based systematic study doping site specific carrier mobility graphene

Programmable graphene doping via electron beam irradiation. (2017)

Abstract Graphene is a promising candidate to succeed silicon based devices, and the conventional strategies for fabrication and testing of graphene-based electronics often utilise an electron beam. Here, we report on a systematic study of the effect of electron beam exposure on graphene devices. We realise reversible doping of on-chip graphene using a focused electron beam. Our results demonstrate site-specific control of carrier type and concentration achievable by modulating the charge distribution in the substrate. The effect of substrate-embedded charges on carrier mobility and conductivity of graphene is studied, with a dielectric screening model proposed to explain the effective n-type and p-type doping produced at different beam energies. Multiple logic operations are thus implemented in a single graphene sheet by using site-specific e-beam irradiation. We extend the phenomenon to MoS2, generalising it to conductive two-dimensional materials. Our results are of importance to imaging, in situ characterisation and lithographic techniques employed to investigate 2D materials.
Collections Ireland -> Trinity College Dublin -> PubMed

Full list of authors on original publication

Hongzhou Zhang, Dapeng Yu, Ying Chen, Darragh Keane, Jakub Jadwiszczak, Yangbo Zhou

Experts in our system

1
Hongzhou Zhang
Trinity College Dublin
Total Publications: 50
 
2
Ying Chen
Trinity College Dublin
Total Publications: 3
 
3
Darragh Keane
Trinity College Dublin
Total Publications: 4
 
4
Jakub Jadwiszczak
Trinity College Dublin
Total Publications: 4
 
5
Yangbo Zhou
Trinity College Dublin
Total Publications: 10