Type

Journal Article

Authors

Justin D. Holmes
Colm O'Dwyer
Colm Glynn
Gillian Collins
Maart van Druenen

Subjects

Chemistry

Topics
silicon doping monolayer x ray photoelectron spectroscopy phosphonic acids covalent functionalization carbon contamination stability

Functionalization of SiO2 surfaces for Si monolayer doping with minimal carbon contamination (2017)

Abstract Monolayer doping (MLD) involves the functionalization of semiconductor surfaces followed by an annealing step to diffuse the dopant into the substrate. We report an alternative doping method, oxide-MLD, where ultrathin SiO2 overlayers are functionalized with phosphonic acids for doping Si. Similar peak carrier concentrations were achieved when compared with hydrosilylated surfaces (∼2 × 1020 atoms/cm3). Oxide-MLD offers several advantages over conventional MLD, such as ease of sample processing, superior ambient stability, and minimal carbon contamination. The incorporation of an oxide layer minimizes carbon contamination by facilitating attachment of carbon-free precursors or by impeding carbon diffusion. The oxide-MLD strategy allows selection of many inexpensive precursors and therefore allows application to both p- and n-doping. The phosphonic acid-functionalized SiO2 surfaces were investigated using X-ray photoelectron spectroscopy and attenuated total reflectance Fourier transform infrared spectroscopy, whereas doping was assessed using electrochemical capacitance voltage and Hall measurements.
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Full list of authors on original publication

Justin D. Holmes, Colm O'Dwyer, Colm Glynn, Gillian Collins, Maart van Druenen

Experts in our system

1
Justin D. Holmes
University College Cork
Total Publications: 182
 
2
Colm O'Dwyer
University College Cork
Total Publications: 121
 
3
Colm Glynn
University College Cork
Total Publications: 19
 
4
Gillian Collins
University College Cork
Total Publications: 22